Semiconductor devices and methods of manufacture thereof

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United States of America Patent

PATENT NO 8785285
APP PUB NO 20130234203A1
SERIAL NO

13415710

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Abstract

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Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region. The source or drain region includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide. The source or drain region also includes a channel-stressing material layer comprising SiCP or SiCAs.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Yao-Tsung Kaohsiung, TW 24 2971
Ko, Chih-Hsin Fongshan, TW 210 9661
Tsai, Ji-Yin Zhudong Township, TW 13 2436
Wann, Clement Hsingjen Carmel, US 290 15152

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