Method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 8785325
APP PUB NO 20120205750A1
SERIAL NO

13233379

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Abstract

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According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming first and second cores on a processed material, forming a covering material having a stacked layer includes first and second layers, the covering material covering an upper surface and a side surface of the first and second cores, removing the second layer covering the first core, forming a first sidewall mask having the first layer on the side surface of the first core and a second sidewall mask having the first and second layers on the side surface of the second core by etching the covering material, removing the first and second cores, and forming first and second patterns having different width in parallel by etching the processed material in condition of using the first and second sidewall masks.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sudo, Gaku Yokohama, JP 38 436

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