Method for forming pattern and method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 8785329
APP PUB NO 20140073141A1
SERIAL NO

13728495

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Abstract

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In a method for forming a pattern according to an embodiment, a first guide pattern and a second guide pattern for induced self organization of a DSA material are formed on substrate. On a first DSA condition, a first phase-separated pattern having regularity with respect to the first guide pattern is formed, and a first pattern is formed by processing the lower layer side. Subsequently, on a second DSA condition, a second phase-separated pattern having regularity with respect to the second guide pattern is formed, and a second pattern is formed by processing the lower layer side.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Konomi, Kenji Tokyo, JP 16 104
Maeda, Shimon Tokyo, JP 21 132

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