Electron beam wafer inspection system and method of operation thereof
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United States of America Patent
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Jul 22, 2014
Grant Date -
N/A
app pub date -
Jul 18, 2013
filing date -
May 6, 2013
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An electron beam wafer imaging system is described. The system includes an emitter for emitting an electron beam; a power supply for applying a voltage between the emitter and the column housing of at least 20 kV; an objective lens for focusing the electron beam on a wafer, wherein the magnetic lens component and the electrostatic lens component substantially overlap each other, wherein the electrostatic lens component has a first electrode, a second electrode and a third electrode; and a control electrode positioned along an optical axis from the position of the third electrode to the position of a specimen stage, wherein the control electrode is configured for control of signal electrons; a controller to switch between a first operational mode and a second operational mode, wherein the controller is connected to a further power supply for switching between the first operational mode and the second operational mode.
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