Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film
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United States of America Patent
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Jul 22, 2014
Grant Date -
Oct 24, 2013
app pub date -
Aug 2, 2012
filing date -
Apr 23, 2012
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Abstract
A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.
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