Semiconductor constructions
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United States of America Patent
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Jul 22, 2014
Grant Date -
Sep 8, 2011
app pub date -
May 16, 2011
filing date -
Jan 27, 2006
priority date (Note) -
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Abstract
The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.
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