Ferroelectric semiconductor transistor devices having gate modulated conductive layer
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United States of America Patent
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Jul 22, 2014
Grant Date -
Nov 22, 2012
app pub date -
May 16, 2011
filing date -
May 16, 2011
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Abstract
Ferroelectric semiconductor switching devices are provided, including field effect transistor (FET) devices having gate stack structures formed with a ferroelectric layer disposed between a gate contact and a thin conductive layer (“quantum conductive layer”). The gate contact and ferroelectric layer serve to modulate an effective work function of the thin conductive layer. The thin conductive layer with the modulated work function is coupled to a semiconductor channel layer to modulate current flow through the semiconductor and achieve a steep sub-threshold slope.
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