Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

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United States of America Patent

PATENT NO 8786040
SERIAL NO

13723866

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Abstract

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Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doczy, Mark L Portland, US 209 5757
Doyle, Brian S Portland, US 369 13961
Kencke, David L Beaverton, US 45 899
Kuo, Charles C Hillsboro, US 90 1503
Oguz, Kaan Dublin, IE 118 862
Shah, Uday Portland, US 159 4607
Suri, Satyarth Hillsboro, US 34 275
Webb, Clair Aloha, US 8 239

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