Semiconductor device having a first substrate containing circuit element connected to radiation plate on a cover plate with metal vias
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United States of America Patent
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Jul 22, 2014
Grant Date -
Dec 13, 2012
app pub date -
Dec 21, 2011
filing date -
Jun 7, 2011
priority date (Note) -
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Abstract
Certain embodiments provide a semiconductor device including a first substrate, a circuit element, a second substrate, a metal layer, and a radiation plate. The circuit element is formed on a front surface of the first substrate and has an electrode. The second substrate has a first face, and is laminated on the first substrate so that the first face of the second substrate faces a front surface of the first substrate. The second substrate has a via hole arranged on the electrode. The metal layer is formed inside of the via hole. The radiation plate is formed on a second face of the second substrate, and is connected to the metal layer.
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