Method of forming vias in semiconductor substrates and resulting structures
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United States of America Patent
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Jul 22, 2014
Grant Date -
Mar 31, 2011
app pub date -
Nov 29, 2010
filing date -
Aug 24, 2004
priority date (Note) -
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Abstract
Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from an active surface through a conductive element thereon and a portion of the substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from a back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by laser ablation or drilling from the back surface of the substrate followed by dry etching to complete the through via.
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