Bias temperature instability-resistant circuits
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United States of America Patent
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Jul 22, 2014
Grant Date -
Jan 3, 2013
app pub date -
Jun 11, 2012
filing date -
Jun 28, 2011
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Abstract
Standard cells that include transistors subject to aging as a result of BTI-related operating conditions are identified and replaced with BTI-resistant standard cells, for example. The BTI-resistant standard cells are typically functionally equivalent circuits (such as circuits included in standard cells in a design library) and are arranged to ensure that critical transistors are protected (e.g., by either extending recovery times and/or turning the transistor off in response to a critical edge transition).
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