GaN HEMT power transistor pulse leveling circuit
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United States of America Patent
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Jul 22, 2014
Grant Date -
N/A
app pub date -
Jul 31, 2012
filing date -
Jul 31, 2012
priority date (Note) -
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Abstract
An apparatus comprising an RF circuit, a converter circuit, an amplifier, and a delay circuit. The RF circuit may be configured to generate (i) an output signal and (ii) a first intermediate signal, in response to (i) an input signal and (ii) a control signal. The converter circuit may be configured to generate a second intermediate signal in response to the first intermediate signal. The amplifier may be configured to generate a third intermediate signal in response to the second intermediate signal. The delay circuit may be configured to generate the control signal in response to the third intermediate signal. The RF circuit may generate the output signal having a flattened response by providing pulse shaping in response to the control signal.
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