Systems, and devices, and methods for programming a resistive memory cell

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United States of America Patent

PATENT NO 8787095
APP PUB NO 20130223163A1
SERIAL NO

13407007

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Abstract

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Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that includes a quenching period. The quenching period includes an initial portion and a subsequent portion, with the subsequent portion different than the initial portion. During the initial portion, the amplitude of the programming pulse may be reduced to a first target amplitude level, and during the subsequent portion, the amplitude of the programming pulse may be further reduced to a second target amplitude level.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Xiaonan Boise, US 34 289

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