Post-deposition cleaning methods for substrates with cap layers
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United States of America Patent
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Jul 29, 2014
Grant Date -
Dec 5, 2013
app pub date -
Mar 22, 2013
filing date -
Dec 21, 2007
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Abstract
One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.
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