Nonvolatile semiconductor memory device and method for manufacturing same
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United States of America Patent
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Jul 29, 2014
Grant Date -
Jan 27, 2011
app pub date -
Jun 22, 2010
filing date -
Jul 21, 2009
priority date (Note) -
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a semiconductor pillar, a memory layer and an outer insulating film. The stacked structure includes a plurality of electrode films and a plurality of interelectrode insulating films alternately stacked in a first direction. The semiconductor pillar pierces the stacked structure in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The outer insulating film is provided between the electrode films and the memory layer. The device includes a first region and a second region. An outer diameter of the outer insulating film along a second direction perpendicular to the first direction in the first region is larger than that in the second region. A thickness of the outer insulating film along the second direction in the first region is thicker than that in the second region.
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