GaN containing optical devices and method with ESD stability

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United States of America Patent

PATENT NO 8791499
SERIAL NO

12785953

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Abstract

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An improved laser light emitting diode. The device has a gallium nitride substrate structure, which includes a surface region. The device also has an epitaxial layer overlying the surface region and a p-n junction formed within a portion of the epitaxial layer. In a preferred embodiment, the device also has one or more plane or line defects spatially configured in a manner to be free from intersecting the p-n junction, the one or more plane or line defects being at least 1×106 cm−2.

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Patent Owner(s)

  • SORAA, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hall, Eric M Goleta, US 32 1378
Sharma, Rajat Goleta, US 87 3327

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