Semiconductor device

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United States of America Patent

PATENT NO 8791517
APP PUB NO 20120032243A1
SERIAL NO

13052152

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Abstract

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According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuda, Koichi Yokohama, JP 230 2179
Kato, Yoshiko Yokohama, JP 38 194
Kutsukake, Hiroyuki Yokohama, JP 66 355
Masuda, Kazunori Yokohama, JP 41 389
Watanabe, Yoshihisa Yokohama, JP 52 423

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