Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device
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United States of America Patent
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Jul 29, 2014
Grant Date -
Mar 21, 2013
app pub date -
Mar 16, 2012
filing date -
Sep 16, 2011
priority date (Note) -
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Abstract
According to one embodiment, a method is disclosed for manufacturing a nonvolatile semiconductor memory device. The method can includes forming a semiconductor layer containing an impurity and forming a pattern on the semiconductor layer. The method can include forming first insulating layers in a stripe shape from a surface of the semiconductor layer toward an inside and forming a first insulating film on the semiconductor layer and on the first insulating layers to form a stacked body including electrode layers on the first insulating film. The method can include forming a pair of holes in the stacked body and forming a space portion connected to a lower end of the holes. The method can include forming a memory film on a side wall of the holes. In addition, the method can include forming a channel body layer on a surface of the memory film.
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