Doping of FinFET structures

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United States of America Patent

PATENT NO 8796093
SERIAL NO

13828276

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Abstract

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A FinFET structure is fabricated using a process that facilitates the effective doping of fin structures. A doped layer is annealed to drive dopants into the fins. The doped layer is removed following annealing. Subsequent to removal of the doped layer, doped semiconductor material is grown epitaxially on the side walls of the fins, forming doped regions extending laterally from the fin side walls. Growth of the semiconductor material may be timed to form diamond-shaped, unmerged epitaxy.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Doris, Bruce B Brewster, US 796 13250
Khakifirooz, Ali Mountain View, US 842 11906
Reznicek, Alexander Troy, US 1408 11211

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