Semiconductor device
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United States of America Patent
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Aug 5, 2014
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N/A
app pub date -
Mar 19, 2009
filing date -
Sep 26, 2008
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Abstract
A semiconductor device includes a semiconductor substrate made of silicon carbide and having a surface, a normal vector for the surface having an off angle with respect to a <0001> direction or a <000-1> direction, a semiconductor layer of a first conductivity type formed on the semiconductor substrate, a first semiconductor region of a second conductivity type formed in a surface region of the semiconductor layer, a source region of a first conductivity type formed in a surface region of the first semiconductor region, a second semiconductor region of a second conductivity type formed in the surface region of the semiconductor layer, contacting the first semiconductor region, and having a bottom surface lower than a bottom surface of the first semiconductor region, wherein at least one end of the bottom surface of the second semiconductor region is perpendicular to an off angle direction.
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