Metal gate and high-K dielectric devices with PFET channel SiGe
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United States of America Patent
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Aug 5, 2014
Grant Date -
Oct 25, 2012
app pub date -
Jul 2, 2012
filing date -
Sep 18, 2009
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Abstract
In a circuit structure, PFET devices have a gate dielectric including a high-k dielectric, a gatestack with a metal, a p-source/drain and silicide layer formed over the p-source/drain; NFET devices include a gate dielectric including a high-k dielectric, a gatestack with a metal, an n-source/drain and silicide layer formed over the n-source/drain. An epitaxial SiGe is present underneath and in direct contact with the PFET gate dielectric, while the epitaxial SiGe is absent underneath the NFET gate dielectric.
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