Write current reduction in spin transfer torque memory devices
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United States of America Patent
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Aug 5, 2014
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app pub date -
Dec 17, 2010
filing date -
Dec 17, 2010
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Abstract
The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.
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