Semiconductor memory device and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 5, 2014
Grant Date -
May 23, 2013
app pub date -
Mar 14, 2012
filing date -
Nov 21, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
According to one embodiment, a semiconductor substrate device includes a plurality of memory elements formed on the top surface of a semiconductor substrate, interlayer insulating films buried between the adjacent memory elements, a protection film formed on sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements, and contacts formed in the interlayer insulating films. The protection film includes a first protection film formed on the sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements and a second protection film formed on the first protection film. The first protection film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and the second protection film is made of a boron film or a boron nitride film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully