Semiconductor device having through electrodes, a manufacturing method thereof, and an electronic apparatus

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United States of America Patent

PATENT NO 8796823
APP PUB NO 20130075896A1
SERIAL NO

13675561

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Abstract

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A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.

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Patent Owner(s)

  • ADVANCED INTERCONNECT SYSTEMS LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hara, Kazumi Suwa, JP 12 308
Yoda, Tsuyoshi Matsumoto, JP 24 123

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