Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer
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United States of America Patent
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Aug 12, 2014
Grant Date -
Jul 3, 2014
app pub date -
Mar 4, 2014
filing date -
Jun 24, 2011
priority date (Note) -
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Abstract
Semiconductor die break strength and yield are improved with a combination of laser dicing and etching, which are followed by dicing an underlying layer of material, such as die attach film (DAF) or metal. A second laser process or a second etch process may be used for dicing of the underlying layer of material. Performing sidewall etching before cutting the underlying layer of material reduces or prevents debris on the kerf sidewalls during the sidewall etching process. A thin wafer dicing laser system may include either a single laser process head solution or a dual laser process head solution to meet throughput requirements.
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