Uniform etch system

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United States of America Patent

PATENT NO 8801892
APP PUB NO 20080210377A1
SERIAL NO

12055212

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Denty,, Jr William M San Jose, US 6 53
Kadkhodayan, Babak Hayward, US 21 1468
Larson, Dean J Pleasanton, US 18 800
Loewenhardt, Peter Pleasanton, US 38 1638
Su, Xingcai Fremont, US 6 119
Takeshita, Kenji Fremont, US 54 924
Wu, Di Newark, US 431 2176
Yen, Bi-Ming Fremont, US 27 285

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