Method for forming resistive switching memory elements

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United States of America Patent

PATENT NO 8802492
APP PUB NO 20130048937A1
SERIAL NO

13219806

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Abstract

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Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.

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Patent OwnerAddress
INTERMOLECULAR INC3011 N FIRST STREET SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gopal, Vidyut Sunnyvale, US 47 1325
Hashim, Imran Saratoga, US 125 2666
Higuchi, Randall San Jose, US 7 60
Tong, Jinhong Santa Clara, US 45 1388

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