Heat treatment method for heating substrate by irradiating substrate with flash of light

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United States of America Patent

PATENT NO 8802550
SERIAL NO

13603584

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Abstract

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First flash irradiation from flash lamps is performed on an upper surface of a semiconductor wafer supported on a temperature equalizing ring of a holder to cause the semiconductor wafer to jump up from the temperature equalizing ring into midair. While the semiconductor wafer is in midair above the temperature equalizing ring, second flash irradiation from the flash lamps is performed on the upper surface of the semiconductor wafer to increase the temperature of the upper surface of the semiconductor wafer to a treatment temperature. Cracking in the semiconductor wafer is prevented because the second flash irradiation is performed while the semiconductor wafer is in midair and subject to no restraints.

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Patent Owner(s)

Patent OwnerAddress
SCREEN HOLDINGS CO LTDKYOTO JAPAN KYOTO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yokouchi, Kenichi Kyoto, JP 40 371

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