Copper interconnect structures and methods of making same
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United States of America Patent
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Aug 12, 2014
Grant Date -
May 8, 2014
app pub date -
Nov 7, 2012
filing date -
Nov 7, 2012
priority date (Note) -
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Abstract
A structure and method of making the structure. The structure includes a dielectric layer on a substrate; a first wire formed in a first trench in the dielectric layer, a first liner on sidewalls and a bottom of the first trench and a first copper layer filling all remaining space in the first trench; a second wire formed in a second trench in the dielectric layer, a second liner on sidewalls and a bottom of the second trench and a second copper layer filling all remaining space in the second trench; and an electromigration stop formed in a third trench in the dielectric layer, a third liner on sidewalls and a bottom of the third trench and a third copper layer filling all remaining space in the third trench, the electromigration stop between and abutting respective ends of the first and second wires.
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