Systems and methods for the crystallization of thin films
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United States of America Patent
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Aug 12, 2014
Grant Date -
Dec 22, 2011
app pub date -
Nov 13, 2009
filing date -
Nov 14, 2008
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Abstract
Crystallization of thin films using pulsed irradiation The method includes continuously irradiating a film having an x-axis and a y-axis, in a first scan in the x-direction of the film with a plurality of line beam laser pulses to form a first set of irradiated regions, translating the film a distance in the y-direction of the film, wherein the distance is less than the length of the line beam, and continuously irradiating the film in a second scan in the negative x-direction of the film with a sequence of line beam laser pulses to form a second set of irradiated regions, wherein each of the second set of irradiated regions overlaps with a portion of the first set of irradiated regions, and wherein each of the first and the second set of irradiated regions upon cooling forms one or more crystallized regions.
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