Techniques for enhancing performance of photovoltaic devices

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United States of America Patent

PATENT NO 8802977
APP PUB NO 20090320916A1
SERIAL NO

12118230

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Abstract

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Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0≦x≦1, and ranges therebetween; 0≦y≦0.2, and ranges therebetween; 0.001≦z≦0.02, and ranges therebetween; and 0≦w≦2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Wei Yorktown Heights, US 1775 13648
Mitzi, David B Mahopac, US 56 722
Yuan, Min Yorktown Heights, US 34 121

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