Semiconductor light emitting device

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United States of America Patent

PATENT NO 8803179
APP PUB NO 20140061696A1
SERIAL NO

13779114

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Abstract

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A semiconductor light emitting device is provided that includes a support substrate, a first metal layer formed on the support substrate, a transparent conductive layer formed on the first metal layer, a second metal layer embedded in the transparent conductive layer, and a semiconductor light emitting layer formed on the transparent conductive layer. A reflectance of the second metal layer to light emitted by the semiconductor light emitting layer is higher than a reflectance of the first metal layer to light emitted by the semiconductor light emitting layer.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akaike, Yasuhiko Ishikawa, JP 39 642
Furukawa, Kazuyoshi Kanagawa, JP 62 899
Nunotani, Shinji Ishikawa, JP 37 358

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