Bipolar non-punch-through power semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 12, 2014
Grant Date -
Aug 15, 2013
app pub date -
Mar 26, 2013
filing date -
Sep 27, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An exemplary bipolar non-punch-through power semiconductor device includes a semiconductor wafer and a first electrical contact on a first main side and a second electrical contact on a second main side. The wafer has an inner region with a wafer thickness and a termination region that surrounds the inner region, such that the wafer thickness is reduced at least on the first main side with a negative bevel. The semiconductor wafer has at least a two-layer structure with layers of different conductivity types, which can include a drift layer of a first conductivity type, a first layer of a second conductivity type at a first layer depth and directly connected to the drift layer on the first main side and contacting the first electrical contact, and a second layer of the second conductivity type arranged in the termination region on the first main side up to a second layer depth.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully