Method of forming stacked trench contacts and structures formed thereby

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United States of America Patent

PATENT NO 8803245
SERIAL NO

12215991

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Abstract

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Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an IID disposed on a top surface of a metal gate disposed on the substrate.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BOULEVARD SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Golonzka, Oleg Beaverton, US 49 165
Sell, Bernhard Portland, US 61 830

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