Magnetoresistive element and magnetoresistive memory

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United States of America Patent

PATENT NO 8803267
APP PUB NO 20130249026A1
SERIAL NO

13621998

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Abstract

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According to one embodiment, a magnetoresistive element includes a first magnetic film having a variable magnetization direction, a second magnetic film having an invariable magnetization direction, and a magnesium oxide film provided between the first magnetic film and the second magnetic film and being in contact with both the first magnetic film and the second magnetic film, and doped with at least one element selected from a first group consisting of copper, silver, and gold.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Daibou, Tadaomi Yokohama, JP 76 1532
Kato, Yushi Chofu, JP 49 393
Kitagawa, Eiji Yokohama, JP 132 3032

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