Method of manufacturing a structure based on anisotropic etching, and silicon substrate with etching mask

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United States of America Patent

PATENT NO 8809200
APP PUB NO 20090130857A1
SERIAL NO

12271993

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Abstract

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A method of manufacturing a structure includes a first step of forming, on a monocrystal silicon substrate having a (100) surface as a principal surface, a basic etching mask corresponding to a target shape and having at least a first structure with a projecting corner and a second structure adjoining the first structure with an opening intervening therebetween, and a correction etching mask extending from the projecting corner of an etching mask of the first structure and connected to an etching mask of the second structure, and a second step of performing anisotropic etching of the monocrystal silicon substrate having the basic etching mask and the correction etching mask to form the target shape.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Takahiro Kawasaki, JP 69 281
Kato, Takahisa Tokyo, JP 139 1107
Torashima, Kazutoshi Palo Alto, US 57 315

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