Thermally assisted MRAM with multilayer strap and top contact for low thermal conductivity
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United States of America Patent
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Aug 19, 2014
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N/A
app pub date -
Mar 13, 2013
filing date -
Mar 13, 2013
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Abstract
A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). The device includes a magnetic tunnel junction configured to store data, a first multilayer contact structure positioned on one end of the magnetic tunnel junction, and a second multilayer contact structure positioned on an opposite end of the magnetic tunnel junction. The first multilayer contact structure and the second multilayer contact structure each include multiple layers of metals. The multiple layers of metals are structured to inhibit thermal conductivity between the magnetic tunnel junction and surrounding structures, and the multiple layers of metals are structured to electrically conduct electrical current.
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