Memory cell system with multiple nitride layers

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United States of America Patent

PATENT NO 8809936
SERIAL NO

11461428

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory cell system is provided including forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming a second insulator layer over the charge trap layer, forming a top blocking intermediate layer over the second insulator layer, and forming a contact layer over the top blocking intermediate layer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.;SPANSION LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ding, Meng Sunnyvale, US 47 349
Fang, Shenqing Fremont, US 127 886
Jeon, Joong Los Altos, US 21 678
Shiraiwa, Hidehiko San Jose, US 78 1595
Sugino, Rinji San Jose, US 44 507
Suh, YouSeok Cupertino, US 48 181
Xue, Lei Sunnyvale, US 107 279

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