Device structures compatible with fin-type field-effect transistor technologies

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8809967
APP PUB NO 20140175550A1
SERIAL NO

14191626

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Device structures, design structures, and fabrication methods for fin-type field-effect transistor integrated circuit technologies. First and second fins, which constitute electrodes of the device structure, are each comprised of a first semiconductor material. The second fin is formed adjacent to the first fin to define a gap separating the first and second fins. Positioned in the gap is a layer comprised of a second semiconductor material.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • GLOBALFOUNDRIES INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gauthier,, Jr Robert J Hinesburg, US 209 2339
Johnson, Jeffrey B Essex Junction, US 130 1751
Li, Junjun Williston, US 153 1558

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Feb 19, 2026
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00