Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient

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United States of America Patent

PATENT NO 8815392
APP PUB NO 20130320242A1
SERIAL NO

13672177

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Abstract

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A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm−3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.

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Patent Owner(s)

Patent OwnerAddress
FREIBERGER COMPOUND MATERIALS GMBH09599 FREIBERG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Börner, Frank Dresden, DE 4 8
Eichler, Stefan Dresden, DE 19 119
Kretzer, Ulrich Chemnitz, DE 5 14
Kropfgans, Frieder Jena, DE 4 13

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