Semiconductor device and method with greater epitaxial growth on 110 crystal plane
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United States of America Patent
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Aug 26, 2014
Grant Date -
Mar 20, 2014
app pub date -
Sep 19, 2012
filing date -
Sep 19, 2012
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Abstract
A semiconductor processing method is provided which promotes greater growth on <110> crystallographic planes than on other crystallographic planes. Growth rates with the process can be reversed compared to typical epitaxial growth processes such that the highest rate of growth occurs on <110> crystallographic planes and the least amount of growth occurs on <100> crystallographic planes. The process can be applied to form embedded stressor regions in planar field effect transistors, and the process can be used to grow semiconductor layers on exposed wall surfaces of adjacent fins in source-drain regions of finFETs to fill spaces between the fins.
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