Transistors with an extension region having strips of differing conductivity type and methods of forming the same
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United States of America Patent
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Aug 26, 2014
Grant Date -
Jun 16, 2011
app pub date -
Dec 16, 2009
filing date -
Dec 16, 2009
priority date (Note) -
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Abstract
Methods of forming transistors and transistors are disclosed, such as a transistor having a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.
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