Preventing FIN erosion and limiting Epi overburden in FinFET structures by composite hardmask
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United States of America Patent
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Aug 26, 2014
Grant Date -
Jun 12, 2014
app pub date -
Dec 7, 2012
filing date -
Dec 7, 2012
priority date (Note) -
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Abstract
A FinFET structure is formed by forming a hardmask layer on a substrate including a silicon-containing layer on an insulating layer. The hardmask layer includes first, second and third layers on the silicon-containing layer. An array of fins is formed from the hardmask layer and the silicon-containing layer. A gate is formed covering a portion but not all of a length of each of the array of fins. The portion covers each of the fins in the array. The gate defines source/drain regions on either side of the gate. A spacer is formed on each side of the gate, the forming of the spacer performed to remove the third layer from portions of the fins in the source/drain regions. The second layer of the hardmask layer is removed from the portions of the fins in the source/drain regions, and the fins in the source/drain regions are merged.
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