Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)

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United States of America Patent

PATENT NO 8815678
APP PUB NO 20080064147A1
SERIAL NO

11928460

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Abstract

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In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0y, Ti1-y)O2 (0z, Ti1-z)O2 (0k, Til, Hfm)O2 (0

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Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iizuka, Toshihiro Tokyo, JP 30 402
Toda, Mami Tokyo, JP 9 118
Yamamichi, Shintaro Tokyo, JP 90 2230
Yamamoto, Tomoe Tokyo, JP 23 292

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