FinFET device formation

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United States of America Patent

PATENT NO 8815693
APP PUB NO 20140203371A1
SERIAL NO

13747683

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Abstract

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A method includes patterning a fin on a semiconductor substrate, depositing a local trench isolation (LTI) layer on the semiconductor substrate, patterning a gate stack over a channel region of the fin and over a portion of the LTI layer, depositing a first capping layer over exposed portions of the LTI layer, performing an etching process to remove oxide material from exposed portions of the fin, and epitaxially growing a semiconductor material from exposed portions of the fin to define active regions.

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Patent Owner(s)

  • AURIGA INNOVATIONS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alptekin, Emre Wappingers Falls, US 91 968
Ramachandran, Ravikumar Pleasantville, US 130 2163
Sardesai, Viraj Y Poughkeepsie, US 45 567
Vega, Reinaldo A Wappingers Falls, US 91 1199

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