Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

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United States of America Patent

PATENT NO 8816315
APP PUB NO 20130146832A1
SERIAL NO

13764065

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Abstract

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A memory cell is provided that includes a reversible resistance-switching element above a substrate. The reversible resistance-switching element includes an etched material layer that includes an oxidized layer of the etched material layer above a non-oxidized layer of the etched material layer. Numerous other aspects are provided.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Clark, Mark H Santa Clara, US 18 214
Herner, Brad San Jose, US 16 1480
Schricker, April D Palo Alto, US 25 576

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