Semiconductor device with gate protection diode
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United States of America Patent
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Aug 26, 2014
Grant Date -
Mar 14, 2013
app pub date -
Feb 29, 2012
filing date -
Sep 8, 2011
priority date (Note) -
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Abstract
Disclosed is a semiconductor device including: a semiconductor substrate; a field effect transistor formed on the semiconductor substrate; and a diode forming area adjacent to a forming area of the field effect transistor, wherein the diode forming area is insulated from the forming area of the field effect transistor on the semiconductor substrate, the diode forming area includes an anode electrode and a cathode electrode arranged side by side in a multi-finger shape, and the anode electrode and the cathode electrode are formed in a direction different from directions of a gate electrode, a source electrode, and a drain electrode of the field effect transistor arranged side by side in a multi-finger shape.
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