Transistor with reduced depletion field width

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United States of America Patent

PATENT NO 8816447
SERIAL NO

13751467

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Abstract

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Devices such as transistors having an oxide layer that provide a depletion field in a conduction channel. A barrier layer is formed over the oxide layer. A gate electrode is formed over the barrier layer. The barrier layer and gate electrode are configured to reduce the width of the depletion field absent a voltage applied to the gate electrode.

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Patent Owner(s)

  • ROUND ROCK RESEARCH, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Derderian, Garo J Boise, US 185 8561
Meng, Shuang Boise, US 56 4521
Sandhu, Gurtej S Boise, US 1217 32397

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