Semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 8816448
APP PUB NO 20100109099A1
SERIAL NO

12609805

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Abstract

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A semiconductor device including a semiconductor substrate, an interface layer formed on the semiconductor substrate including at least 1×1020 atoms/cm3 of S (Sulfur), a metal-semiconductor compound layer formed on the interface layer, the metal-semiconductor compound layer including at least 1×1020 atoms/cm3 of S in the its whole depth, and a metal electrode formed on the metal-semiconductor compound layer.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kinoshita, Atsuhiro Kanagawa-ken, JP 100 2180
Nishi, Yoshifumi Kanagawa-ken, JP 92 587

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