Semiconductor device and method for manufacturing the same
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United States of America Patent
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Aug 26, 2014
Grant Date -
Apr 24, 2014
app pub date -
Jun 4, 2013
filing date -
Oct 24, 2012
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a first insulating film formed above a substrate, wires formed on the first insulating film, an air gap formed between the adjacent wires, and a second insulating film formed on the wires and the air gap. Each of the wires has a metal film formed on the first insulating film and a hard mask formed on the metal film, the hard mask has a first layer and a second layer, a second internal angle formed by the under surface and the side surface of the second layer on a cross section of the second layer is smaller than a first internal angle formed by the under surface and the side surface of the first layer on a cross section of the first layer, and the top surface of the air gap is higher than the top surface of the metal film.
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